IXFH110N15T2
20
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
19
R G = 3.3 ?
V GS = 10V
19
R G = 3.3 ?
V GS = 10V
18
17
V DS = 75V
18
V DS = 75V
T J = 125oC
16
I
D
= 110A
17
15
I
D
= 55A
16
T J = 25oC
14
13
12
15
14
25
35
45
55
65
75
85
95
105
115
125
55
60
65
70
75
80
85
90
95
100
105
110
T J - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
I D - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
280
90
28
80
240
200
t r t d(on) - - - -
T J = 125oC, V GS = 10V
V DS = 75V
80
70
26
24
t f t d(off) - - - -
R G = 3.3 ? , V GS = 10V
V DS = 75V
70
60
160
I D = 110A
60
22
50
120
50
I D = 55A, 110A
80
40
I D = 55A
40
30
20
18
40
30
0
2
4
6
8
10
12
14
16
18
20
20
16
25
35
45
55
65
75
85
95
105
115
20
125
R G - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
T J - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
23
t f
t d(off) - - - -
80
120
t f
t d(off) - - - -
250
22
R G = 3.3 ? , V GS = 10V
70
100
T J = 125oC, V GS = 10V
210
V DS = 75V
V DS = 75V
21
60
80
170
20
19
T J = 125oC
T J = 25oC
50
40
60
40
I D = 55A
130
90
I
D
= 110A
18
17
30
20
20
0
50
10
55
60
65
70
75
80
85
90
95
100
105
110
2
4
6
8
10
12
14
16
18
20
I D - Amperes
? 2008 IXYS CORPORATION, All rights reserved
R G - Ohms
相关PDF资料
IXFH110N25T MOSFET N-CH 250V 110A TO-247
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